By D. J. Fisher
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Additional info for Diffusivity in silicon, 1953 to 2009
6 x 10-13  Fe Bulk Diffusion The pairing reaction of interstitial Fe and substitutional B atoms, in Fe-diffused Bdoped p-type material, was studied by using deep-level transient spectroscopy. Measurements were made as a function of storage time at temperatures of 0, 27, 42, 57 and 72C (table 40). 81(eV)/kT] David J. Fisher 53 Diffusion Coefficient of Iron in Silicon at Room Temperature. 78 x 10-13  Fe Bulk Diffusion Profiles in samples which had been diffused with Fe at temperatures of between 800 and 1070C were determined by means of deep-level transient spectroscopy.
Soncini: Solid State Electronics, 1976, 19, 545-6  B Bulk Diffusion (111) wafers were diffused from BN sources at 986 to 1132C, and doping profiles were determined via serial sectioning and sheet conductivity. They revealed nearsurface plateaux of nearly constant doping, and large deviations from an erfc profile. The diffusion coefficient was deduced from the profiles using Boltzmann's method. A marked increase in the coefficient, as a function of B concentration, was noted for concentrations greater than 1019/cm3.
7eV. Microscopic Aspects of Boron Diffusion in Ultra-Low Energy Implanted Silicon. Moffatt: Applied Physics Letters, 1999, 75, 1869-71  B Bulk Diffusion The transient enhanced diffusion of B, which had been ion-implanted to a dose of 1014/cm2, was studied by means of rapid thermal annealing and secondary ion mass spectrometry. It was found that the fraction of B diffusivity which was due to implantation damage decreased with time according to: D = Doexp[-t/L] where Do was the diffusion coefficient at t = 0 and L was the lifetime of the point defect which caused the enhanced diffusion.
Diffusivity in silicon, 1953 to 2009 by D. J. Fisher